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Si4818DY
Vishay Siliconix
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
V GS(th)
I GSS
I DSS
I D(on)
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = 20 V
V DS = 24 V, V GS = 0 V
V DS = 24 V, V GS = 0 V, T J = 85 °C
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 6.3 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
0.8
1.0
20
30
0.018
100
100
1
100
15
2000
0.022
V
nA
μA
A
Drain-Source On-State Resistance b
R DS(on)
V GS = 10 V, I D = 9.5 A
V GS = 4.5 V, I D = 5.4 A
Ch-2
Ch-1
0.0125
0.024
0.0155
0.030
Ω
V GS = 4.5 V, I D = 8.2 A
Ch-2
0.0165
0.0205
Forward Transconductance b
g fs
V DS = 15 V, I D = 6.3 A
V DS = 15 V, I D = 9.5 A
Ch-1
Ch-2
17
28
S
Diode Forward Voltage b
V SD
I S = 1.3 A, V GS = 0 V
I S = 1 A, V GS = 0 V
Ch-1
Ch-2
0.7
0.47
1.1
0.5
V
Dynamic a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q g
Q gs
Q gd
R g
t d(on)
t r
t d(off)
t f
t rr
Channel-1
V DS = 15 V, V GS = 5 V, I D = 6.3 A
Channel-2
V DS = 15 V, V GS = 5 V, I D = - 9.5 A
Channel-1
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
Channel-2
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
I F = 1.3 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 μA/μs
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
1.5
0.5
8.0
15
1.75
5.3
3.2
4.6
10
15
5
5
26
44
8
12
30
32
12
23
6.1
2.6
20
30
10
10
50
80
16
24
60
70
nC
Ω
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
SCHOTTKY SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V F
Test Conditions
I F = 1.0 A
I F = 1.0 A, T J = 125 °C
Min.
Typ.
0.47
0.36
Max.
0.50
0.42
Unit
V
V R = 30 V
0.004
0.100
Maximum Reverse Leakage Current
I rm
V R = 30 V, T J = 100 °C
0.7
10
mA
V R = - 30 V, T J = 125 °C
3.0
20
Junction Capacitance
C T
V R = 10 V
50
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71122
S09-0867-Rev. C, 18-May-09
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